Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2008
ISSN: 1882-0778,1882-0786
DOI: 10.1143/apex.1.023001